Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering

Thornton, R. L.; Burnham, R. D.; Paoli, T. L.; Holonyak, N.; Deppe, D. G.
July 1986
Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p133
Academic Journal
The process of silicon impurity induced disordering has been used to fabricate very efficient buried heterostructure AlGaAs lasers with lifetimes in the thousands of hours at 50 °C. These devices operate in a single transverse mode up to 25 mW, and in a single longitudinal mode with adjacent mode suppression of 23 dB.


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