Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structure

Van Eck, T. E.; Chu, P.; Chang, W. S. C.; Wieder, H. H.
July 1986
Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p135
Academic Journal
Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structure has been observed. With only ten quantum wells, 6.4% transmission modulation was obtained at 0.950 μm with 2 V reverse bias. A single absorption peak was observed, in contrast to the double peak observed in similar GaAs/AlGaAs structures. The present structure is fabricated on a GaAs substrate which is transparent to light at the exciton absorption wavelength.


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