TITLE

Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure

AUTHOR(S)
Reed, M. A.; Lee, J. W.; Tsai, H-L.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p158
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Resonant tunneling has been demonstrated through a double barrier, single quantum well heterostructure in which the barriers have been replaced by thin, short period binary superlattices. The superlattice structure does not exhibit the asymmetry around zero bias in the electrical characteristics normally observed in the conventional AlxGa1-xAs barrier structures, suggestive of reduced roughness at the inverted interface by superlattice smoothing. The structure exhibits an anomalously low barrier height and a peak to valley tunnel current ratio of 1.8:1 at 300 K.
ACCESSION #
9820375

 

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