Observation of local lattice distortion induced by In doping in GaAs

Fujiwara, Y.; Kita, Y.; Tonami, Y.; Nishino, T.; Hamakawa, Y.
July 1986
Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p161
Academic Journal
The In concentration dependence of newly observed Cr-related luminescence lines has been systematically investigated by a low-temperature photoluminescence (PL) method in In,Cr-codoped GaAs. As a result, it has been found that the luminescence center of these In,Cr-related PL lines is a complex of InGa-CrGa-VAs. Furthermore, their relative peak positions with respect to the well-known Cr-VAs PL line have been analyzed by using uniaxial stress data, the result suggesting that local lattice distortion of about 1% is induced by In doping in GaAs.


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