TITLE

High photoconductive gain in GexSi1-x/Si strained-layer superlattice detectors operating at λ=1.3 μm

AUTHOR(S)
Temkin, H.; Bean, J. C.; Pearsall, T. P.; Olsson, N. A.; Lang, D. V.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p155
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate high photoconductive gain in GexSi1-x/Si strained-layer superlattice detectors grown by molecular beam epitaxy. The gain mechanism is considered to be the preferential hole trapping in the GexSi1-x wells. Ge0.6Si0.4 waveguide devices operating at the wavelength of 1.3 μm show an optical gain as large as 40 at a low bias of 5–7 V and a gain bandwidth product as large as 3.6 GHz. Preliminary bit error experiments show sensitivity sufficient for transmission at distances of over 25 km and data rates of 200 Mb/s.
ACCESSION #
9820339

 

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