Optically pumped tunable mode-locked Si-doped GaAs laser

Valk, B.; Call, T. S.; Salour, M. M.; Kopp, W.; Morkoç, H.
July 1986
Applied Physics Letters;7/21/1986, Vol. 49 Issue 3, p119
Academic Journal
Mode-locked operation of Si-doped bulk GaAs in external cavity was achieved by synchronous pumping with a Kr+ laser at 647.1 nm. High beam quality and peak powers of up to 3.3 W are unique features of this laser. The spontaneous spectrum is narrower than those of dyes, allowing a stabilized single-frequency operation with fewer wavelength selective elements, while tunability over a range of 300 Ã… was achieved by varying the temperature.


Related Articles

  • AlxGa1-xAs-GaAs vertical-cavity surface-emitting laser grown on Si substrate. Deppe, D. G.; Chand, Naresh; van der Ziel, J. P.; Zydzik, G. J. // Applied Physics Letters;2/19/1990, Vol. 56 Issue 8, p740 

    Data are presented demonstrating room-temperature operation of AlxGa1-xAs-GaAs vertical-cavity surface-emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown-in quarter-wave AlAs-GaAs stack is used as the n-side reflector and a nonalloyed...

  • Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates. van der Ziel, J. P.; Dupuis, R. D.; Logan, R. A.; Pinzone, C. J. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p89 

    Using pulsed current excitation we have studied the rapid degradation of the laser properties of low-threshold-graded refractive-index single quantum well GaAs lasers grown by metalorganic vapor deposition on Si substrates. The degradation results from the growth of nonradiative regions in the...

  • Low threshold buried-heterostructure quantum well lasers by excimer laser assisted disordering. Epler, J. E.; Thornton, R. L.; Mosby, W. J.; Paoli, T. L. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1459 

    Laser assisted disordering based upon a direct-write Ar+ laser beam has been established as a fabrication technique for high quality optoelectronic devices. In this letter, we report a new form of laser assisted disordering in which an excimer laser beam, photolithographically patterned, is used...

  • Room-temperature continuous operation of GaAs/AlGaAs lasers grown on Si by organometallic vapor-phase epitaxy. Choi, H. K.; Wang, C. A.; Fan, John C. C. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1916 

    Presents a study that examined graded-index separate-confinement heterostructure single-quantum well gallium arsenide (GaAs)/AlGaAs diode lasers exhibiting continuous operation at room temperature grown on silicon by organometallic vapor-phase epitaxy. Effect of defect-filtering layers on the...

  • Low-threshold (∼600 A/cm2 at room temperature) GaAs/AlGaAs lasers on Si (100). Chen, H. Z.; Ghaffari, A.; Wang, H.; Morkoç, H.; Yariv, A. // Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1320 

    Low-threshold graded-refractive-index GaAs/AlGaAs laser structures were grown on Si (100) by molecular beam epitaxy and tested at room temperature under a probe station. Broad area devices having widths of 110–120 μm and cavity lengths of ∼500–1210 μm exhibited threshold...

  • Non-linear absorption of 1.3-μm wavelength femtosecond laser pulses focused inside semiconductors: Finite difference time domain-two temperature model combined computational study. Bogatyrev, I. B.; Grojo, D.; Delaporte, P.; Leyder, S.; Sentis, M.; Marine, W.; Itina, T. E. // Journal of Applied Physics;Nov2011, Vol. 110 Issue 10, p103106 

    We present a theoretical model, which describes local energy deposition inside IR-transparent silicon and gallium arsenide with focused 1.3-μm wavelength femtosecond laser pulses. Our work relies on the ionization rate equation and two temperature model (TTM), as we simulate the non-linear...

  • 1/f noise in double-heterojunction AlGaAs/GaAs laser diodes on GaAs and on Si substrates. Fang, R. Z.; van Rheenen, A. D.; van der Ziel, A.; Young, A. C.; van der Ziel, J. P. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p4087 

    Presents a study which measured the low frequency electrical current noise in double-heterojunction AlGaAs/GaAs laser diodes on gallium arsenide and on silicon substrates. Experimental details; Results and discussion; Conclusion.

  • Self-Organization of Nanoislands on the Surface of Silicon and Gallium Arsenide Single Crystals Stimulated by Spatially Periodic Laser Radiation Fields. Verevkin, Yu. K.; Daume, É. Ya.; Petryakov, V. N.; Gushchin, Yu. Yu.; Tikhov, S. V. // Technical Physics Letters;Sep2005, Vol. 31 Issue 9, p759 

    Four interfering laser beams acting upon the surface of silicon and gallium arsenide single crystals stimulate the self-organization of nanoislands, which is manifested by the development of processes controlling the size of islands in a two-dimensional periodic structure formed on the sample...

  • Hybrid laser combines III-V gain with silicon waveguide. Jones-Bey, Hassaun A. // Laser Focus World;Jan2006, Vol. 42 Issue 1, p38 

    The article reports that researchers at the University of California, Santa Barbara have bonded nonsilicon semiconductor optical-gain layers directly to a silicon laser cavity to fabricate a hybrid alternative to silicon Raman laser. The laser uses indium aluminum gallium arsenide quantum wells...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics