TITLE

Submicron silicon powder production in an aerosol reactor

AUTHOR(S)
Wu, Jin Jwang; Flagan, Richard C.; Gregory, Otto J.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p82
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Powder synthesis by thermally induced vapor phase reactions is described. The powder generated by this technique consists of spherical, nonagglomerated particles of high purity. The particles are uniform in size, in the 0.1–0.2 μm size range. Most of the particles are crystalline spheres. A small fraction of the spheres are amorphous. Chain agglomerates account for less than 1% of the spherules.
ACCESSION #
9820316

 

Related Articles

  • New method of producing well-aligned ZnO nanorods on a Si-SiO2 substrate. Hung, N. C.; Wang, G. Z.; Yau, M. Y.; Ng, Dickon H. L. // Journal of Materials Research;Aug2004, Vol. 19 Issue 8, p2226 

    Well-aligned ZnO nanorods arrays were fabricated by sintering powder Zn underneath a Si-SiO2 substrate. In this fabrication, ZnO was produced by the displacement reactions between Zn and SiO vapors. We found that these ZnO nanorods grew toward the [0001] direction. The diameter and the alignment...

  • Surface Modification of Silicon Carbide Powder with Silica Coating by Rotary Chemical Vapor Deposition. Zhenhua He; Hirokazu Katsui; Rong Tu; Takashi Goto // Key Engineering Materials;2014, Vol. 616, p232 

    The surface of silicon carbide (SiC) powder was modified by coating with amorphous silica (SiO2) using (C2H5O4)Si (tetraethyl orthosilicate: TEOS) as a precursor by rotary chemical vapor deposition (RCVD). With increasing deposition time from 0.9 to 14.4 ks, the mass content of SiO2 coating...

  • Use of carbon black to eliminate surface charging effects in photoelectron spectroscopy.... Obrovac, M.N.; Yuan Gao // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2262 

    Examines the use of carbon black to eliminate the surface charging effects in photoelectron spectroscopy (PES) measurements of silicon powders. Effect of carbon black on charging and peak deformation; Importance of PES for studying the electronic properties of materials; Account on the effective...

  • Diamond deposition on thin cylindrical substrates. RISTIĆ, GORDANA S.; BOGDANOV, ŽARKO D.; TRTICA, MILAN S.; MILJANIĆ, ŠCEPAN S. // Journal of the Serbian Chemical Society;Mar2011, Vol. 76 Issue 3, p407 

    No abstract available.

  • Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films. Meaudre, M.; Gueunier-Farret, M. E.; Meaudre, R.; Kleider, J. P.; Vignoli, S.; Canut, B. // Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p033531 

    Hydrogenated silicon-germanium alloys (SiGe:H) are deposited by plasma-enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder. It is thus possible to obtain nanostructured materials that we call polymorphous materials, pm-Si1-xGex:H. Studies of...

  • Structure and Properties of a-Si:H Films Grown by Cyclic Deposition. Afanas’ev, V. P.; Gudovskikh, A. S.; Kon’kov, O. I.; Kazanin, M. M.; Kougiya, K. V.; Sazanov, A. P.; Trapeznikova, I. N.; Terukov, E. I. // Semiconductors;Apr2000, Vol. 34 Issue 4, p477 

    Amorphous hydrogenated silicon films obtained by cyclic deposition with intermediate annealing in hydrogen plasma were studied, a-Si:H films deposited under optimal conditions are photosensitive (photoconductivity to dark conductivity ratio σ[sub ph]/σ[sub d] is as high as 10[sup 7] under...

  • Low-temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure. de Doer, W.D.; Meyer, D.J. // Applied Physics Letters;3/25/1991, Vol. 58 Issue 12, p1286 

    Studies low-temperature chemical vapor deposition of epitaxial silicon and SiGe layers at atmospheric pressure. Silicon growth rate enhancement; Domain of molecular beam epitaxy.

  • Atomic arrangement at the AlN/Si (111) interface. Liu, R.; Ponce, F. A.; Dadgar, A.; Krost, A. // Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p860 

    High-quality GaN epilayers have been grown on Si (111) substrates by metalorganic vapor phase epitaxy using a low-temperature AlN nucleation layer. The atomic arrangement at the epilayer/ substrate interface has been investigated by high-resolution electron microscopy. A crystallographically...

  • Photochemical vapor deposition of hydrogenated amorphous silicon films from disilane and trisilane using a low pressure mercury lamp. Kumata, Ken; Itoh, Uichi; Toyoshima, Yasutake; Tanaka, Naoki; Anzai, Hiroyuki; Matsuda, Akihisa // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1380 

    The photolysis of disilane (Si2H6) and trisilane (Si3H8) under direct excitation by light from a low pressure mercury lamp was carried out to prepare hydrogenated amorphous silicon films (a-Si:H). The electronic and optical properties of the films were investigated as functions of preparation...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics