Extraction of Schottky diode parameters from forward current-voltage characteristics

Cheung, S. K.; Cheung, N. W.
July 1986
Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p85
Academic Journal
It is shown that by using the forward current density-voltage (J-V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V-n(kT/q)ln(J/A**T2), will each give a straight line. The ideality factor n, the barrier height [lowercase_phi_synonym]B, and the series resistance R of the Schottky diode can be determined with one single I-V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.


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