Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures

Tsuchiya, Masahiro; Sakaki, Hiroyuki
July 1986
Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p88
Academic Journal
The dependence of current components on GaAs well widths is studied in AlAs/GaAs/AlAs double barrier diode structures having AlAs barriers of 8 atomic layers. It is shown for the first time that the density JRT of resonant current varies from 8×102 to 1.6×104 A cm-2 by the choice of the well width from 9 to 5 nm in accordance with theoretical calculations. Furthermore, one of these diodes shows excellent current-voltage characteristics at room temperature with a peak to valley ratio of 3, the highest value ever reported.


Related Articles

  • Unified description of resonant tunnelling diodes and terahertz quantum cascade lasers. Faist, J.; Scalari, G. // Electronics Letters;12/23/2010, Vol. 46 Issue 26, pS46 

    It is shown that the density matrix framework developed in the context of quantum cascade lasers can also be successfully used to compute the transport and gain in resonant tunnelling diodes. In particular, it is shown that the obstacle to raising the resonant frequency of resonant tunnelling...

  • Resonance-tunnel-transit diode with coherent tunneling as an oscillator in the submillimeter range. Gel’vich, É. A.; Golant, E. I.; Pashkovskiı, A. B.; Sazonov, V. P. // Technical Physics Letters;May99, Vol. 25 Issue 5, p382 

    This paper presents an improved method for designing a resonance-tunnel-transit diode that makes it possible to substantially increase its negative dynamic resistance.

  • Excess Noise Peaks in Porous Silicon-Based Diode Structures. Demidov, E. S.; Demidova, N. E.; Karzanov, V. V.; Shabanov, V. N. // JETP Letters;6/10/2002, Vol. 75 Issue 11, p556 

    Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer formed on heavily boron-doped silicon single...

  • Theory of coherent generation in resonant-tunneling diodes. Elesin, V. F. // Journal of Experimental & Theoretical Physics;Aug99, Vol. 89 Issue 2, p377 

    A rigorous quantum-mechanical description is given of coherent generation in a resonanttunneling diode for the simple model of a double-barrier structure. Exact analytical solutions of the Schrödinger equation are found for electrons in the presence of a weak electromagnetic field. The active...

  • Influence of ballistic electrons on the device characteristics of vertically integrated resonant... Rascol, J.J.L.; Martin, K.P.; Carnahan, R.E.; Higgins, R.J.; Cury, L.A.; Portal, J.C.; Park, B.G.; Wolak, E.; Lear, K.L.; Harris Jr., J.S. // Applied Physics Letters;4/8/1991, Vol. 58 Issue 14, p1482 

    Studies the influence of ballistic electrons on the device characteristics of vertically integrated resonant tunneling diodes. Results' confirmation of the isolated circuit element picture of the sample.

  • Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current... Kapre, R.M.; Madhukar, A. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2255 

    Studies highly strained GaAs/InGaAs/AlAs resonant tunneling diodes. Peak current density; Peak to valley ratio; Device design; Use of resonant tunneling devices as sources of microwave and millimeter wave power.

  • Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes. Brown, E.R.; Soderstrom, J.R. // Applied Physics Letters;5/20/1991, Vol. 58 Issue 20, p2291 

    Studies oscillations in InAs/AlSb double-barrier resonant tunneling diodes at room temperature. Measured power density; Frequency range of oscillations; High-speed characteristics.

  • Electron resonant tunneling in Si/SiGe double barrier diodes. Ismail, K.; Meyerson, B.S.; Wang, P.J. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p973 

    Examines the electron resonant tunneling in silicon/silicon germanide (SiGe) double barrier diodes. Preparation of the device by ultrahigh vacuum chemical vapor deposition; Observation of the device negative differential conductance; Conduction band of SiGe.

  • Electron-state lifetimes in submicron diameter resonant tunneling diodes. Tewordt, M.; Ritchie, D.A.; Syme, R.T.; Kelly, M.J.; Law, V.J.; Newbury, R.; Pepper, M.; Frost, J.E.F.; Jones, G.A.C.; Stobbs, W.M. // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p1966 

    Examines the electron-state lifetimes in submicron diameter resonant tunneling diodes. Investigation on the lifetimes of electron states in the quantum wells; Observation on the current-voltage characteristics; Explanation on the experimental lifetimes from transmission electron microscopy.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics