Electron states in narrow gate-induced channels in Si

Laux, Steven E.; Stern, Frank
July 1986
Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p91
Academic Journal
Self-consistent numerical solutions of the Poisson and Schrödinger equations have been obtained for the states of electrons under a narrow gate or under a narrow slit in a metal-oxide-silicon structure with an inner and an outer gate. For the cases considered (30-nm-wide gate and 80-nm-wide slit), the states of motion parallel to the Si-SiO2 interface are more closely spaced than the states for motion perpendicular to the interface. It should be possible, for the structures considered, to achieve a dynamically one-dimensional system with an electron density <=106 cm-1.


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