TITLE

cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K

AUTHOR(S)
Caneau, C.; Srivastava, A. K.; Zyskind, J. L.; Sulhoff, J. W.; Dentai, A. G.; Pollack, M. A.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p55
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Continuous operation of 2.1 μm wavelength Ga0.84In0.16As0.15Sb0.85 /Al0.27Ga0.73As0.04Sb0.96 double heterostructure injection lasers has been achieved up to a temperature of 190 K for the first time. The laser wafers were grown by liquid phase epitaxy. In pulsed operation, broad area devices with active layer thicknesses of 0.8–1.0 μm exhibited room-temperature threshold current densities as low as 7 kA/cm2.
ACCESSION #
9820291

 

Related Articles

  • Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy. Ivanov, S. V.; Moiseev, K. D.; Kaıgorodov, V. A.; Solov’ev, V. A.; Sorokin, S. V.; Meltser, B. Ya.; Grebenshchikova, E. A.; Sedova, I. V.; Terent’ev, Ya. V.; Semenov, A. N.; Astakhova, A. P.; Mikhaılova, M. P.; Toropov, A. A.; Yakovlev, Yu. P.; Kop’ev, P. S.; Alferov, Zh. I. // Semiconductors;Jun2003, Vol. 37 Issue 6, p736 

    The lasing of an injection-pumped p-AlGaAsSb/n[SUP0]-InAs/n-CdMgSe double hybrid heterostructure in the mid-IR range is demonstrated for the first time. The lasing wavelength λ is 2.775 μm, and the threshold current density J[SUBth] = 3-4 kA/cm[SUP2] at T = 77 K. The structure grown by...

  • Properties of InxGa1-xAs-GaAs strained-layer quantum-well-heterostructure injection lasers. Laidig, W. D.; Lin, Y. F.; Caldwell, P. J. // Journal of Applied Physics;1/1/1985, Vol. 57 Issue 1, p33 

    Investigates some of the properties of strained-layer quantum-well heterostructure (SL-QWH) current injection lasers to evaluate the potential of the strained-layer lasers. Cross section of SL-QWH laser grown by molecular beam epitaxy; Room temperature emission spectra for SL-QWH laser;...

  • Difference Mode Generation in Injection Lasers. Aleshkin, V. Ya.; Afonenko, A. A.; Zvonkov, N. B. // Semiconductors;Oct2001, Vol. 35 Issue 10, p1203 

    The nonlinear generation of a difference mode in an injection laser is considered. A new design based on the InGaP/GaAs/InGaAs heterostructure is suggested in order to generate two laser modes with a wavelength of about 1 �m and a difference mode at a wavelength of about 10 �m. In...

  • Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity. Danilova, A. P.; Danilova, T. N.; Imenkov, A. N.; Kolchanova, N. M.; Stepanov, M. V.; Sherstnev, V. V.; Yakovlev, Yu. P. // Semiconductors;Sep99, Vol. 33 Issue 9, p991 

    A reduction in the emission wavelength in the preferred mode of InAsSbP/InAsSb/InAsSbP heterostructure lasers by 50 Ã… is observed when the current is raised from 1.8 to 5 times the threshold with dc and pulsed power. A comparison of the spectral and spatial distributions of the output as...

  • Quantum-Dimensional Lasers with Weak Temperature Dependence of the Output Power. Nalivko, S. V.; Afonenko, A. A.; Manak, I. S. // Technical Physics Letters;Mar2000, Vol. 26 Issue 3, p193 

    An injection laser configuration based on asymmetric quantum-dimensional heterostructure with inhomogeneous excitation of quantum wells (QW) is proposed. This configuration allows one to substantially reduce the temperature dependence of the output power. It is demonstrated that the relative...

  • Blue-green injection lasers containing pseudomorphic Zn[sub 1-x]Mg[sub x]S[sub y]Se[sub 1-y].... Gaines, J.M.; Drenten, R.R.; Haberern, K.W.; Marshall, T.; Mensz, P.; Petruzzello, J. // Applied Physics Letters;5/17/1993, Vol. 62 Issue 20, p2462 

    Examines the performance of blue-green injection lasers containing Zn[sub 1-x]Mg[sub x]S[sub y]Se[sub 1-y] cladding layers. Measurement of the pulsed output powers at room temperature; Improvement in optical confinement; Separate-confinement of the heterostructures of lasers.

  • Monolithic integration of a new optoelectronic device based on a modulation-doped heterostructure. Honda, Y.; Suemune, I.; Yamanishi, M. // Applied Physics Letters;8/5/1991, Vol. 59 Issue 6, p621 

    Demonstrates the monolithically integrated lateral-current-injection laser and junction field-effect transistor based on modulation-doped heterostructures. Characteristics of the device; Dynamic on/off ratio in the light output; Compatibility of the laser and the JFET in terms of structures.

  • Radiation dynamics of injection lasers with saturating absorber in resonator. Manak, I. S. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2008, Vol. 11 Issue 1, p16 

    The structure of a GaAlAs laser with saturating absorber in a resonator and a method of research of the light generation dynamics with the use of an optical stroboscopic oscilloscope OSO-1 which has a time resolution of ∼30 ps are described. The dependence of the succession frequency of...

  • GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy. DenBaars, S. P.; Beyler, C. A.; Hariz, A.; Dapkus, P. D. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1530 

    Atomic layer epitaxy (ALE) is a relatively new crystal growth technique which allows control of the growth process at the monolayer level through a self-limiting, surface-controlled growth mechanism. We report here the use of ALE to grow high-quality GaAs/AlGaAs quantum wells and the first...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics