Analysis of a Y-junction semiconductor laser array

Streifer, William; Cross, Peter S.; Welch, David F.; Scifres, Don R.
July 1986
Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p58
Academic Journal
An analysis of a new type of high power semiconductor laser array is presented. The array consists of parallel, uncoupled waveguides linked at Y junctions in one region. We show that for the lowest threshold array mode all the waveguides oscillate in phase and all (except possibly the outermost) have equal amplitudes. The array mode should be stable above threshold and it radiates in a single-lobe far-field pattern if the individual waveguide mode width is comparable to the guide separation.


Related Articles

  • Stable and fast 100 GHz-spaced 30-channel digitally tunable operation in monolithically integrated semiconductor laser employing chirped ladder filter. Jeong, S.-H.; Matsuo, S.; Segawa, T.; Okamoto, H.; Kawaguchi, Y.; Kondo, Y.; Suzuki, H.; Yoshikuni, Y. // Electronics Letters;10/13/2005, Vol. 41 Issue 21, p1176 

    Stable and fast 100 GHz-spaced 30-channel digital tuning operation with single longitudinal-mode oscillation in a monolithically integrated semiconductor diode laser has been achieved. It is experimentally demonstrated that the oscillation frequencies of the tunable laser were stabilised using...

  • Intensity Dynamics in a Waveguide Array Laser. Williams, Matthew O.; Kutz, J. Nathan // World Congress on Engineering 2009 (Volume 2);2009, p1127 

    The intensity dynamics of a five-emitter laser array subject to a linearly decreasing injection current are examined numerically. We have matched the results of the numerical model to an experimental AlGaAs quantum-dot array laser and have achieved the same robust oscillatory power output with a...

  • Modeling of InGaAsP–InP 1.55 μm lasers with integrated mode expanders using fiber-matched leaky waveguides. Galarza, M.; De Mesel, K.; Fuentes, D.; Baets, R.; López-Amo, M. // Applied Physics B: Lasers & Optics;2001, Vol. 73 Issue 5/6, p585 

    A new concept for InGaAsP–InP 1.55 μm lasers integrated with spot size converters using leaky waveguides is presented. The large fundamental mode size and the high discrimination of the higher order modes make ARROWs (Antiresonant Reflecting Optical Waveguides) and antiguided...

  • sheer power.  // Electronics Letters;5/9/2013, Vol. 49 Issue 10, p632 

    The article focuses on the use of inductively coupled plasma (ICP) reactive ion etching (RIE) by researcher Takashi Hosoda and colleagues to develop a ridge waveguide based diode laser.

  • Four wavelength distributed feedback ridge waveguide quantum-well heterostructure laser array. Miller, L.M.; Beernink, K.J. // Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p2964 

    Describes a four-wavelength strained-layer distributed feedback ridge waveguide quantum-well heterostructure laser array. Growth of the heterostructure laser by chemical vapor deposition; Incorporation of parallel configuration of four uncoupled emitters; Achievement of lateral optical...

  • Dynamics of resonant optical waveguide semiconductor laser arrays. Ramanujan, Sujatha; Winful, Herbert G. // Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3226 

    Investigates the dynamics of resonant optical waveguide semiconductor laser arrays. Dependence of antiguided laser temporal stability on pump current level; Mechanism of antiguide coupling; Effect of carrier antiguiding on mode competition.

  • Temporal behavior of resonant-optical-waveguide phase-locked diode laser arrays. Ramanujan, Sujatha; Winful, Herbert G. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p827 

    Measures the temporal and spatial behavior of resonant-optical-waveguide arrays for semiconductor lasers. Presence of sustained self-pulsation in laser output intensity; Contribution of interelement absorption to self-pulsation formation; Effect of reducing or eliminating interelement loss on...

  • Comprehensive above-threshold analysis of large-aperture (8–10 μm) antiresonant reflecting optical waveguide diode lasers. Chang, J. C.; Lee, J. J.; Al-Muhanna, A.; Mawst, L. J.; Botez, D. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4901 

    An above-threshold analysis of 8-10-μm-core antiresonant reflecting optical waveguide (ARROW) lasers is performed, including the carrier-induced index depression, carrier diffusion, and gain spatial hole burning (GSHB). The study is done as a function of the (transverse) optical-mode...

  • Mode locking of semiconductor laser with curved waveguide and passive mode expander. Williamson, C. A.; Adams, M. J.; Ellis, A. D.; Borghesani, A. // Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p322 

    Active mode locking is reported for a 1.55 μm semiconductor laser with a curved waveguide and passive mode expander, placed in a wavelength tunable external cavity. One facet with a very low reflectivity of 8 × 10[SUP-6] is achieved through a curved active region that tapers into an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics