TITLE

Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °C

AUTHOR(S)
Nishida, Shoji; Shiimoto, Tsunenori; Yamada, Akira; Karasawa, Shiro; Konagai, Makoto; Takahashi, Kiyoshi
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p79
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel Si epitaxial growth technique using mercury-sensitized photochemical vapor deposition has been developed. Epitaxial thin films (300–8000 Å) were grown on (100)Si substrates at 100–300 °C from a gas mixture of Si2H6+SiH2F2+H2 by irradiation of a low pressure mercury lamp (1849,2537 Å). The growth rate, plotted as a function of the reciprocal substrate temperature, represented an activation energy which was found to be a small value of 0.18 eV. Observation of the surface structure by reflective high-energy electron diffraction showed fine (100) streak patterns for films grown at 200 °C as well as at 250 and 300 °C.
ACCESSION #
9820279

 

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