TITLE

Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers

AUTHOR(S)
Zory, P. S.; Reisinger, A. R.; Waters, R. G.; Mawst, L. J.; Zmudzinski, C. A.; Emanuel, M. A.; Givens, M. E.; Coleman, J. J.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/7/1986, Vol. 49 Issue 1, p16
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thermally induced threshold wavelength shifts of 50 nm have been observed in short cavity length diode lasers fabricated from thin quantum well AlGaAs. Analysis suggests that the high-energy radiation is generated by transitions between the n=2 level in the conduction band and the n=2 heavy hole level in the valence band. The threshold characteristic temperature (T0) of the laser material is found to be a strong function of cavity length.
ACCESSION #
9820271

 

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