TITLE

Growth of GaAs bicrystals

AUTHOR(S)
Cho, N.-H.; Carter, C. B.; Elgat, Z.; Wagner, D. K.
PUB. DATE
July 1986
SOURCE
Applied Physics Letters;7/7/1986, Vol. 49 Issue 1, p29
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bicrystals of gallium arsenide have been grown by the technique of organometallic, vapor phase epitaxy on substrates cut from Czochralski-grown germanium bicrystals. Both <110> and <001> tilt boundaries have been grown. Experimental illustrations of the Σ=3 and Σ=5 grain boundaries are presented. The grain boundaries tend to facet along well-defined planes but closely reproduce the misorientation of the seed bicrystal.
ACCESSION #
9820264

 

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