Growth of GaAs bicrystals

Cho, N.-H.; Carter, C. B.; Elgat, Z.; Wagner, D. K.
July 1986
Applied Physics Letters;7/7/1986, Vol. 49 Issue 1, p29
Academic Journal
Bicrystals of gallium arsenide have been grown by the technique of organometallic, vapor phase epitaxy on substrates cut from Czochralski-grown germanium bicrystals. Both <110> and <001> tilt boundaries have been grown. Experimental illustrations of the Σ=3 and Σ=5 grain boundaries are presented. The grain boundaries tend to facet along well-defined planes but closely reproduce the misorientation of the seed bicrystal.


Related Articles

  • Dislocation reduction in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition. Tun, C. J.; Kuo, C. H.; Fu, Y. K.; Kuo, C. W.; Pan, C. J.; Chi, G. C. // Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p212109 

    Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple MgxNy/GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple MgxNy/GaN buffer layers exhibit a low nuclei density,...

  • Seed-layer mediated orientation evolution in dielectric Bi–Zn–Ti–Nb–O thin films. Kim, Jin Young; Noh, Jun Hong; Lee, Sangwook; Yoon, Sung-Hun; Cho, Chin Moo; Hong, Kug Sun; Jung, Hyun Suk; Lee, Jung-Kun // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p232903 

    Highly (hhh)-oriented pyrochlore Bi–Zn–Ti–Nb–O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN....

  • Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Si substrates. Raghavan, Srinivasan; Redwing, Joan M. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2995 

    Stress evolution during metal organic chemical vapor deposition growth of AIN layers on (111) Si and (0001) sapphire substrates was investigated using in situ wafer curvature measurements in order to understand the origin of growth stresses. AIN layers 170±30 nm thick were deposited over a...

  • Grain boundary related electrical transport in Al-rich AlGaN layers grown by metal-organic chemical vapor deposition. Yildiz, A.; Tasli, P.; Sarikavak, B.; Lisesivdin, S.; Ozturk, M.; Kasap, M.; Ozcelik, S.; Ozbay, E. // Semiconductors;Jan2011, Vol. 45 Issue 1, p33 

    Electrical transport data for Al-rich AlGaN layers grown by metal-organic chemical vapor deposition (MOCVD) are presented and analyzed in the temperature range 135-300 K. The temperature dependence of electrical conductivity indicated that conductivity in the films was controlled by potential...

  • Defect Reduction in AlN Epilayers Grown by MOCVD via Intermediate-Temperature Interlayers. Chen, Shengchang; Li, Yang; Ding, Yanyan; Li, Senlin; Zhang, Min; Wu, Zhihao; Fang, Yanyan; Dai, Jiangnan; Chen, Changqing // Journal of Electronic Materials;Jan2015, Vol. 44 Issue 1, p217 

    In this work, significant reduction of the density of threading dislocations (TDs) in AlN epilayers grown on sapphire substrates via metalorganic chemical vapor deposition has been obtained by insertion of thin intermediate-temperature interlayers (IT-ILs). The growth temperature of the IT-ILs...

  • Modeling of hall mobility for In2O3 thin film by metal organic chemical vapor deposition. Qiang, Lei; Pei, Yanli; Yao, Ruohe // European Physical Journal - Applied Physics;2019, Vol. 88 Issue 1, p1 

    In the light of variable temperature (4.2–300 K) Hall-effect measurements a physics-based model for Hall mobility of indium oxide (In2O3), thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility,...

  • High-resolution piezoresponse force microscopy investigation of imprint in ferroelectric thin films. Anbusathaiah, V.; Nagarajan, V.; Aggarwal, S. // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p132912 

    High-resolution piezoresponse force microscopy is used to visualize imprint in polycrystalline PbZr0.25Ti0.75O3 thin films. Three-dimensional domain images show the formation of a thin bright band (∼8 nm in width) running along the grain boundary after local application of a negative bias....

  • Nanoheteroepitaxial growth of GaN on Si nanopillar arrays. Hersee, S. D.; Sun, X. Y.; Wang, X.; Fairchild, M. N.; Liang, J.; Xu, J. // Journal of Applied Physics;6/15/2005, Vol. 97 Issue 12, p124308 

    Nanoheteroepitaxial growth of GaN by metal-organic chemical-vapor deposition on dense arrays of (111) Si nanopillars has been investigated. Scanning electron microscopy, cross-sectional transmission electron microscopy, and electron-diffraction analysis of 0.15-μm-thick GaN layers indicate...

  • Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique. Dhawan, Tanuj; Tyagi, Renu; Bag, Rajesh Kumar; Singh, Mahavir; Mohan, Premila; Haldar, T.; Murlidharan, R.; Tandon, R. P. // Nanoscale Research Letters;Jan2010, Vol. 5 Issue 1, p31 

    Self-assembled InAs quantum dots (QDs) were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics