Optoelectrochemical impedance measurements: A new technique for the electrical characterization of dielectric/semiconductor interfaces

Stricot, Y.; Clechet, P.; Martin, J. R.
July 1986
Applied Physics Letters;7/7/1986, Vol. 49 Issue 1, p32
Academic Journal
We have developed a new method for the characterization of dielectric/semiconductor interfaces. This technique uses an electrolyte/dielectric/semiconductor structure under electrochemical potentiostatic polarization, and a weak modulated illumination with above-band-gap light which acts as a probe and does not modify the thermodynamic equilibrium of the electrochemical system too much. The analyzed photopotential relative to illumination in terms of impedance allows the characterization of the dielectric/semiconductor interface. To demonstrate the optoelectrochemical impedance measurement technique, results obtained on a p-Si/SiO2 sample are presented. The advantages of this method compared to purely solid-state impedance and electrochemical impedance measurements are discussed.


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