Temperature dependence of shunt resistance in photovoltaic devices

Banerjee, S.; Anderson, W. A.
July 1986
Applied Physics Letters;7/7/1986, Vol. 49 Issue 1, p38
Academic Journal
Shunt resistance in surface passivated Si solar cells has been experimentally shown to be temperature dependent with a maximum value of 2×107 Ω cm2. Mechanisms responsible for shunt resistance are identified as a combination of multistep tunneling and thermal trapping-detrapping of carriers through the defect states in the space-charge region.


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