Electrical characteristics of InAsSb/GaSb heterojunctions

Srivastava, A. K.; Zyskind, J. L.; Lum, R. M.; Dutt, B. V.; Klingert, J. K.
July 1986
Applied Physics Letters;7/7/1986, Vol. 49 Issue 1, p41
Academic Journal
Heterojunctions of n-type InAs0.95Sb0.05 grown by metalorganic chemical vapor deposition on n-type GaSb substrates were studied by capacitance-voltage and current-voltage measurements. The n-n heterojunctions are strongly rectifying and behave like metal-(n) GaSb Schottky diodes with a barrier height of 0.80±0.02 eV. These measurements establish that the band lineup in this system is of the broken gap variety. We measure the valence-band offset, Ev(GaSb)-Ev(InAs0.95Sb0.05), to be 0.67±0.04 eV.


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