Chemical etching for the evaluation of hydrogenated amorphous silicon films

Chu, T. L.; Chu, Shirley S.
June 1986
Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1783
Academic Journal
Chemical etching using a 1:5:40 HF-HNO3-CH3COOH solution has been used for the evaluation of hydrogenated amorphous silicon (a-Si:H) films. The dissolution rate of a-Si[ATOTHER]@B:[/ATOTHER] H films and the structural features brought out by etching have revealed significant differences in the properties of a-Si:H films deposited in hydrogen and helium atmospheres. Unintentionally contaminated a-Si[ATOTHER]@B:[/ATOTHER] H films have also been found to show considerably higher dissolution rate than intrinsic films, and the dissolution rate measurements may be used to optimize the deposition conditions.


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