Self-aligned polycrystalline silicon thin-film transistors by laser implantation

Coxon, P.; Lloyd, M.; Migliorato, P.
June 1986
Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1785
Academic Journal
Polycrystalline silicon thin-film transistors have been fabricated using photochemical doping with phosphorus from the gas phase by ultraviolet laser. The results obtained show the technique to be a viable alternative to ion implantation for applications such as three-dimensional very large scale integrated circuits.


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