Low-temperature deposition of low resistivity ZnSe films by reactive sputtering

Stirn, R. J.; Nouhi, A.
June 1986
Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1790
Academic Journal
Low resistivity semiconducting films of ZnSe have been deposited at temperatures as low as 120 °C using dc magnetron co-sputtering of Zn and In (dopant) targets in a reactive atmosphere of H2Se/Ar. Yellowish transparent films of ZnSe on glass and conductive transparent oxide-coated glass substrates were obtained having a room-temperature resistivity as low as 20 Ω cm. Atomic absorption analysis showed a Zn to Se ratio of 49.8:49.0 and In concentration of about 1% for the reactively sputter-deposited ZnSe:In films on glass. Optical absorption/transmission measurements yielded an energy band gap of about 2.65 eV at room temperature. X-ray diffraction results indicated highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film.


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