TITLE

100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

AUTHOR(S)
Lin, T. L.; Chen, S. C.; Kao, Y. C.; Wang, K. L.; Iyer, S.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1793
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2 V-1 s-1 with a doping concentration of 6×1015 cm-3 has been achieved.
ACCESSION #
9820216

 

Related Articles

  • SiGe/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates. Denisov, S.; Matveev, S.; Chalkov, V.; Shengurov, V.; Drozdov, Yu.; Stepikhova, M.; Shengurov, D.; Krasilnik, Z. // Semiconductors;Mar2014, Vol. 48 Issue 3, p402 

    The growth of heterostructures with SiGe layers on $$\left( {1\bar 102} \right)$$ sapphire substrates by molecular-beam epitaxy with a silicon sublimation source and a germanium gas source (GeH) is reported. The systematic study of the influence of substrate temperature and thickness of the...

  • Structural and Photoluminescence Properties of Heteroepitaxial Silicon-on-Sapphire Layers. Svetlov, S.P.; Chalkov, V. Yu.; Shengurov, V.G.; Drzodov, Yu. N.; Krasil'nik, Z.F.; Krasil'nikova, L.V.; Stepikhova, M.V.; Pavlov, D.A.; Pavlova, T.V.; Shilyaev, P.A.; Khokhlov, A.F. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p10 

    The growth of erbium-doped silicon layers on sapphire substrates through sublimation molecular-beam epitaxy is studied for the first time. Structural analysis data are given, and the luminescence properties of layers are discussed. Heteroepitaxial silicon-on-sapphire layers grown at a...

  • Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates. BOMMENA, R.; SELDRUM, T.; SAMAIN, L.; SPORKEN, R.; SIVANANTHAN, S.; BRUECK, S. R. J. // Journal of Electronic Materials;Sep2008, Vol. 37 Issue 9, p1255 

    Silicon-based substrates for the epitaxy of HgCdTe are an attractive low-cost choice for monolithic integration of infrared detectors with mature Si technology and high yield. However, progress in heteroepitaxy of CdTe/Si (for subsequent growth of HgCdTe) is limited by the high lattice and...

  • Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors. Schuller, Ch.; Höfling, S.; Forchel, A.; Etrich, C.; Iliew, R.; Lederer, F.; Pertsch, T.; Reithmaier, J.P. // Electronics Letters;10/26/2006, Vol. 42 Issue 22, p1280 

    Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1 µm were fabricated. The maximum transmittance of a 90° bend with radius of 2 µm can be enhanced to almost 99% at a wavelength of 1.55 µm, which corresponds to an...

  • Molecular beam epitaxy of GaAs on Si-on-insulator. Wenhua Zhu; Yuehi Yu; Chenglu Lin; Aizhen Li; Shichang Zou; Hemment, P.L.F. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p210 

    Investigates the growth of gallium arsenide films on silicon-on-insulator by molecular beam epitaxy. Use of Rutherford backscattering and x-ray double-crystal diffraction; Relation between crystal quality and film thickness; Determination of the refractive index profiles.

  • Effect of residual impurities on transport properties of β-FeSi2 epitaxial films grown by molecular beam epitaxy. Terai, Y.; Yoneda, K.; Noda, K.; Miura, N.; Fujiwara, Y. // Journal of Applied Physics;Jul2012, Vol. 112 Issue 1, p013702 

    Unintentionally doped β-FeSi2 epitaxial films were grown on silicon-on-insulator substrates by molecular beam epitaxy using a high-purity (5N) Fe source to investigate the effect of residual impurities on the transport properties of β-FeSi2. From secondary ion mass spectroscopy analysis,...

  • Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields. Nikolaev, D. V.; Antonova, I. V.; Naumova, O. V.; Popov, V. P.; Smagulova, S. A. // Semiconductors;Jul2002, Vol. 36 Issue 7, p800 

    The behavior of charge in a buried oxide of the silicon-on-insulator structures obtained using the Dele-Cut technology was studied by keeping the structures under a voltage with an electric-field strength of 2-5.5 MV/cm. A mobile positive charge drifting under the effect of applied voltage was...

  • Transformation of Interface States in Silicon-on-Insulator Structures under Annealing in Hydrogen Atmosphere. Antonova, I. V.; Stano, I.; Nikolaev, D. V.; Naumova, O. V.; Popov, V. P.; Skuratov, V. A. // Semiconductors;Jan2002, Vol. 36 Issue 1, p60 

    Changes induced by annealing the spectrum of states on a Si/SiO[sub 2] interface obtained by direct bonding and on a Si(substrate)/〈thermal SiO[sub 2]〉 interface in silicon-on-insulator (SOI) structures were investigated by charge-related deep-level transient spectroscopy. The...

  • Transistor Elements for 30nm Physical Gate Lengths and Beyond. Doyle, Brian; Arghavani, Reza; Barlage, Doug; Datta, Suman; Doczy, Mark; Kavalieros, Jack; Murthy, Anand; Chau, Robert // Intel Technology Journal;5/16/2002, Vol. 6 Issue 2, p42 

    We have fabricated conventional planar transistors of various gate lengths down to as small as 10nm polysilicon gate lengths, in order to examine transistor scaling. At 30nm gate lengths, the devices show excellent device characteristics, indicating that this node can be met with conventional...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics