Schottky barrier heights of Hg, Cd, and Zn on n-type InP(100)

Sa, C. J.; Meiners, L. G.
June 1986
Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1796
Academic Journal
We report a study of the electrical properties of Schottky barrier heights of column IIB metals (Hg, Cd, and Zn) on chemically cleaned n-type InP(100). Hg/InP diodes were formed by using a commercially available mercury probe, while Cd/InP diodes and Zn/InP diodes were fabricated by electroplating techniques. Dark forward bias current-voltage as well as dark reverse bias capacitance-voltage measuring techniques were used to characterize the samples. The barrier heights were found to be 0.92, 0.62, and 0.43 eV for Hg/n-InP, Cd/n-InP, and Zn/n-InP, respectively. The barrier heights for Hg/n-InP and Cd/n-InP are higher than commonly thought possible on n-type InP.


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