Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals

Larsen, A. Nylandsted; Shiryaev, S. Yu.; So\rensen, E. Schwartz; Tidemand-Petersson, P.
June 1986
Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1805
Academic Journal
Rapid thermal annealing of arsenic implanted <100> silicon single crystals has been studied by Rutherford backscattering/channeling spectrometry, and Hall effect/resistivity measurements, combined with layer removal. Redistribution of the implanted arsenic was followed as a function of anneal time (6–60 s including temperature rise time) and implanted peak concentration (3–10×1020 cm-3) at temperatures of 1050 and 1090 °C. The maximum concentration of electrically active arsenic was found to be 2–3×1020 cm-3 independent of anneal time and implanted peak concentration. Fast arsenic redistribution was observed to take place within the first 20 s of annealing. Complete arsenic activation occurred by means of rapid redistribution to the solubility limit.


Related Articles

  • Dynamics of the hydrodynamical growth of columns on silicon exposed to ArF excimer-laser irradiation. Sánchez, F.; Morenza, J.L.; Aguiar, R.; Delgado, J.C.; Varela, M. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 1, p83 

    Abstract. We present new results about the development of the whiskerlike structures that grow on silicon single crystals exposed in air to ArF excimer-laser irradiation. Small depressions appear on the surface after 100-200 laser pulses. With the next pulses, the size of these depressions...

  • Optical properties of mirrors for focusing of non-normal incidence atom beams Wilson, R. J.; Wilson, R.J.; Hoist, B.; Holst, B.; Allison, W. // Review of Scientific Instruments;Jul99, Vol. 70 Issue 7, p2960 

    Presents calculations of the focal properties and third-order aberration coefficients for atom mirrors based on elastically deformed single-crystal surfaces. Biaxial loading of the mirrors; Thickness of the silicon single-crystal wafers; Conditions for beam focusing at non-normal incidence;...

  • Pressure dependence of arsenic diffusivity in silicon. Nygren, Eric; Aziz, Michael J.; Turnbull, David; Poate, John M.; Jacobson, Dale C.; Hull, Robert // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p105 

    The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with...

  • Si substrates texturing and vapor-solid-solid Si nanowhiskers growth using pure hydrogen as source gas. Nordmark, H.; Nagayoshi, H.; Matsumoto, N.; Nishimura, S.; Terashima, K.; Marioara, C. D.; Walmsley, J. C.; Holmestad, R.; Ulyashin, A. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    Scanning and transmission electron microscopies have been used to study silicon substrate texturing and whisker growth on Si substrates using pure hydrogen source gas in a tungsten hot filament reactor. Substrate texturing, in the nanometer to micrometer range of mono- and as-cut...

  • Effect of surface treatment on dopant diffusion in polycrystalline silicon capped shallow junction bipolar transistors. McLaughlin, K. L.; Taylor, M. A.; Sweeney, G. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p992 

    The outdiffusion of boron and arsenic was studied as a function of surface treatment prior to polycrystalline silicon (polysilicon) deposition in the fabrication of bipolar transistors. Secondary ion mass spectrometry and spreading resistance probe analyses were performed to measure boron,...

  • Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometry. Schaber, H.; Criegern, R. v.; Weitzel, I. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4036 

    Presents a study that analyzed the polycrystalline silicon diffusion sources using secondary ion mass spectrometry. Methodology; Measurement of the diffusion profiles of arsenic and phosphorus in the crystal; Influence of the poly-silicon/mono-silicon interface; Determination of the diffusion...

  • Structural defects and band-structure parameters of CdAs, ZnAs, CdZnAs, and ZnCdAs single crystals. Marenkin, S.; Morozova, V.; Koshelev, O. // Inorganic Materials;Sep2010, Vol. 46 Issue 9, p1001 

    Structurally perfect CdAs, ZnAs, CdZnAs, and ZnCdAs single crystals have been grown, and the main parameters of their band structure have been determined. We have proposed band structure models for the crystals and presented evidence in favor of the models of structural defects responsible for...

  • EuFeAs: Magnetic Structure and Local Charge Distribution Anisotropies as Seen by Resonant X-ray Scattering. Herrero-Martín, J.; Mazzoli, C.; Scagnoli, V.; Paolasini, L.; Walker, H.; Xiao, Y.; Brueckel, T.; Mittal, R.; Kumar, N.; Dhar, S. K.; Thamizhavel, A.; Su, Y. // Journal of Superconductivity & Novel Magnetism;Feb2011, Vol. 24 Issue 1/2, p705 

    Non-resonant and element specific magnetic X-ray scattering has been used to determine the orientation of Eu and Fe magnetic moments in EuFeAs iron pnictide. Experiments have been carried out on single crystal samples at the ESRF. Resonant measurements on magnetic reflections at the Eu L...

  • Soft-glass photonic-crystal fiber transmits singlemode, broadband light.  // Laser Focus World;Sep2011, Vol. 47 Issue 9, p9 

    The article offers information on the glass photonic-crystal fiber which offers single-mode broadband light guidance developed by the Max Planck Institute for the Science of Light in Erlangen, Germany.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics