TITLE

Rapid thermal annealing of high concentration, arsenic implanted silicon single crystals

AUTHOR(S)
Larsen, A. Nylandsted; Shiryaev, S. Yu.; So\rensen, E. Schwartz; Tidemand-Petersson, P.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1805
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Rapid thermal annealing of arsenic implanted <100> silicon single crystals has been studied by Rutherford backscattering/channeling spectrometry, and Hall effect/resistivity measurements, combined with layer removal. Redistribution of the implanted arsenic was followed as a function of anneal time (6–60 s including temperature rise time) and implanted peak concentration (3–10×1020 cm-3) at temperatures of 1050 and 1090 °C. The maximum concentration of electrically active arsenic was found to be 2–3×1020 cm-3 independent of anneal time and implanted peak concentration. Fast arsenic redistribution was observed to take place within the first 20 s of annealing. Complete arsenic activation occurred by means of rapid redistribution to the solubility limit.
ACCESSION #
9820211

 

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