TITLE

Low threshold, optically pumped, room-temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge-coated Si substrates

AUTHOR(S)
van der Ziel, J. P.; Dupuis, R. D.; Bean, J. C.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1713
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low threshold, optically pumped laser oscillation has been obtained using AlGaAs/GaAs double heterostructures grown on Ge-coated Si substrates. The optical pump power for threshold is comparable to similar heterostructures grown on GaAs substrates. Between 20 and 85 °C the threshold temperature dependence is exponential with T0=160 °C. The laser wavelength and the peak of the spontaneous emission of lasers grown on Si substrates are shifted to longer wavelengths relative to bulk GaAs. This results largely from the strain in the plane of the epilayer produced by the difference in the thermal contraction of the layers and the Si substrate on cooling from the growth temperature.
ACCESSION #
9820181

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics