Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two-step metalorganic chemical vapor deposition

Welch, D. F.; Cross, P. S.; Scifres, D. R.; Streifer, W.; Burnham, R. D.
June 1986
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1716
Academic Journal
High quality buried heterostructure (BH) lasers were grown by a two-step metalorganic chemical vapor deposition. Single stripe BH lasers exhibited thresholds of 20 mA for a 1.2-μm stripe. The spectral output emits in a single transverse and longitudinal mode up to 15 mW, with a side lobe suppression greater than 23 dB at 5 mW output. BH laser arrays were fabricated with threshold currents of 130 mA and differential efficiencies of 70% for a 10-stripe array.


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