TITLE

Analysis of the far-field output angle scanning by injection locking of a diode laser array

AUTHOR(S)
Weber, Jean-Pierre; Wang, Shyh
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1719
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a linear theory to explain the experimentally observed emission angle scanning of an injection-locked diode laser array when the frequency of the injected light is changed. This theory is based on eigenmode analysis of the coupled waveguides and on the use of the antenna array theory for the far-field pattern. The experimental results are explained in terms of the resonant excitation of eigenmodes, which selects the far-field pattern associated with the resonant mode. The agreement with published results is good.
ACCESSION #
9820177

 

Related Articles

  • V-grooved inner-stripe laser diodes on a p-type substrate operating over 100 mW at 1.5 μm wavelength. Horikawa, H.; Oshiba, S.; Matoba, A.; Kawai, Y. // Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p374 

    An output power of 110 mW cw has been achieved with a V-grooved inner-stripe laser diode on a p-type substrate emitting at 1.5 μm wavelength. Output powers over 100 mW could be obtained by determining the appropriate cavity length and the reflectivity of the front mirror facet, a parameter...

  • Multi-photon pumping in a large band gap semiconductor laser. Liu, C.S.; Tripathi, V.K. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p15 

    Presents a study which looks at multi-photon pumping in a large band gap semiconductor laser. Detailed information on the methodology used to conduct the study; Discussion based on the results of the study.

  • Semiconductor laser achieves record single-mode fiber-coupling efficiency.  // Laser Focus World;Mar94, Vol. 30 Issue 3, p9 

    Reports that researchers in Lexington, Massachusetts have coupled more that 1 W of 974 nanometer output from two copropagaing lasers into a single-mode fiber using semiconductor pump lasers. Fiber-coupling efficiency; Pumping of an erbium-doped fiber amplifier.

  • Shortest-wavelength blue semiconductor laser reported.  // Laser Focus World;Dec94, Vol. 30 Issue 12, p9 

    Reports on the development of a semiconductor laser with a wave-length of 463 nm at the Brown University in Providence, Rhode island. Features of the laser.

  • The future looks bright for high-power semiconductor lasers. Anderson, Stephen G. // Laser Focus World;Dec94, Vol. 30 Issue 12, p63 

    Focuses on the applications of high-power semiconductor lasers. Features of semiconductor lasers; Use of the output of diode lasers to pump a solid material; Research on the applications of semiconductor lasers.

  • Indium arsenide device provides mid-IR output. Anderson, Stephen G. // Laser Focus World;Apr95, Vol. 31 Issue 4, p18 

    Features the high-power mid-infrared semiconductor lasers demonstrated by scientists at Hughes Research Laboratories and MIT Lincoln Laboratory. Material structure; Laser sources.

  • Optically pumped II-VI multiple-quantum-well device lases at 333 nanometers.  // Laser Focus World;Jun96, Vol. 32 Issue 6, p9 

    Reports that University of Hull researchers have demonstrated ultraviolet laser action at 333 nanometer from a II-VI multiple-quantum-well structure grown by molecular-beam epitaxy. Methodology of the study; Electronic gain as a contributor to lasing; Aim of the research to produce a diode laser...

  • `Inverted' ridge suggests high power output. Carts-Powell, Yvonne // Laser Focus World;Jul96, Vol. 32 Issue 7, p18 

    Reports on researchers' development of a semiconductor laser with an inverted microstrip ridge structure that shows potential for both high-power output and very-high-frequency operation at the important communication wavelength of 1.55 micrometers. Design and structure of the new device;...

  • Aluminum-free large-optical-cavity diode laser generates 8 W at 980 nm.  // Laser Focus World;Aug96, Vol. 32 Issue 8, p9 

    Reports that more than 8 watts of 980-nanometer continuous-wave (CW) output power from the front facet of a 100-micron-aperture aluminum-free semiconductor laser has been obtained by researchers. Highest CW output reported from any 100-micron-strip semiconductor laser; Application of the broad...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics