New experimental method for extracting the density and generation annealing rates of interface and oxide traps

Sah, Chih-Tang; Lin, Wallace Wan-Li; Hsu, Charles Ching-Hsiang; Pan, Samuel Cheng-Sheng
June 1986
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1736
Academic Journal
A new method is proposed which gives the initial and final steady-state densities and the generation-annealing kinetic rates of each interface state and oxide trap species. The number of stress-anneal cycles required to give deterministic values of the rates is equal to the number of interface or oxide traps. An implementation example is given on the post-irradiation room-temperature annealing of the two interface and two oxide traps in a silicon metal-oxide-semiconductor capacitor. Accurate relative hydrogen concentration can also be determined at atomic hydrogen densities as low as 106 atoms/cm3.


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