TITLE

Activation mechanism for Si implanted into semi-insulating GaAs

AUTHOR(S)
Hyuga, Fumiaki; Watanabe, Kazuo; Osaka, Jiro; Hoshikawa, Keigo
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1742
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hall effect and photoluminescence are measured for Si-implanted and SiO2-capped annealed GaAs, and for S-implanted and SiN-capped annealed GaAs. These experimental data are compared with those for Si-implanted and SiN-capped annealed GaAs. No remarkable change in sheet carrier concentration (Ns) is observed around dislocations and the SiAs photoluminescence peak is absent in the SiO2-capped annealed layer. Dislocations decrease Ns in the S-implanted layer. These results indicate that the activation efficiency of Si implanted into GaAs is determined by SiAs acceptor concentration.
ACCESSION #
9820160

 

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