Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs

Nomura, Toshio; Makita, Yunosuke; Irie, Katsuhiro; Ohnishi, Nobukazu; Kudo, Kazuhiro; Tanaka, Hideki; Mitsuhashi, Yoshinobu
June 1986
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1745
Academic Journal
The selective optical compensation effect in which exclusively acceptor-associated emissions g and [g-g] are selectively quenched by the simultaneous presence of acceptor and donor atoms, was investigated in dually Zn+ (acceptor)-implanted and Se+(donor)-implanted GaAs as a function of Se to Zn concentration ratio, [Se]/[Zn], at a fixed Zn concentration of 1×1017 cm-3. It was revealed for the first time that Se atoms with one-tenth of the concentration of Zn have the ability to significantly suppress the [g-g] emission. However, the g emission is not significantly suppressed by the presence of even an equal concentration of Se atoms.


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