Growth of single crystal bcc α-Fe on ZnSe via molecular beam epitaxy

Prinz, G. A.; Jonker, B. T.; Krebs, J. J.; Ferrari, J. M.; Kovanic, F.
June 1986
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1756
Academic Journal
Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α-Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance (FMR), and vibrating sample magnetometry. The FMR linewidth and measured coercive field are significantly smaller than previously reported for single crystal Fe films.


Related Articles

  • Evolution of magnetic anisotropy and spin-reorientation transition in Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy. Muduli, P. K.; Herfort, J.; Schönherr, H.-P.; Ploog, K. H. // Journal of Applied Physics;6/15/2005, Vol. 97 Issue 12, p123904 

    The magnetic properties of Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy are studied using superconducting quantum interference device magnetometry for a wide range of thickness varying from 3.5 monolayers (MLs) to 100 nm (714 MLs). The first signature of ferromagnetism is...

  • Nd[sup 3+] incorporation in CaF[sub 2] layers grown by molecular beam epitaxy. Bausa, L.E.; Legros, R.; Munoz-Yague, A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p152 

    Examines the growth of monocrystalline layers of Nd[sup 3+]-doped CaF[sub 2] on (100)CaF[sub 2] substrates by molecular beam epitaxy. Concentration of Nd in CaF[sub 2] films; Evaporation of CaF[sub 2] using a standard effusion cell equipped with a boron nitride crucible; Generation of the...

  • Ethyliodide n-type doping of Hg[sub 1-x]Cd[sub x]Te (x=0.24) grown by metalorganic molecular.... Benz II, R.G.; Conte-Matos, A. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2836 

    Examines the growth of conductive n-type Hg[sub 1-x]cs[sub x]Te epitaxial layers by molecular beam epitaxy using iodine doping. Selection of ethyliodide as the dopant precursor; Increase in the low temperature electron concentration; Indication of electrical activity in the high electron...

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...

  • Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes. Li, C. H.; Kioseoglou, G.; van 't Erve, O. M. J.; Hanbicki, A. T.; Jonker, B. T.; Mallory, R.; Yasar, M.; Petrou, A. // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1544 

    We report electrical spin injection from an Fe contact into a (110)-oriented light-emitting diode (LED) structure, and compare results with data obtained from (001)-oriented structures to address the dependence of spin injection on interface and orientation. Fe/AlGaAs/GaAs LEDs were grown by...

  • Metastable fcc-Fe film epitaxially grown on Cu(100) single-crystal underlayer. Ohtake, Mitsuru; Shimamoto, Kohei; Futamoto, Masaaki // Journal of Applied Physics;May2013, Vol. 113 Issue 17, p17C117 

    Fe film of 40 nm thickness is prepared on fcc-Cu(100) single-crystal underlayer at room temperature by ultra-high vacuum molecular beam epitaxy. The film growth and the detailed structure are investigated by reflection high-energy electron diffraction, cross-sectional high-resolution...

  • Growth of A[sup 3]N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase. Mamutin, V. V. // Technical Physics Letters;Sep99, Vol. 25 Issue 9, p741 

    It is shown that InN and GaN whiskers and plate-shaped crystals can be grown by molecularbeam epitaxy (MBE), and the growth mechanism on gallium arsenide and sapphire substrates is investigated. A comparison is made with the theory. It is proved that the growth mechanism corresponds to the...

  • Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy. Hanjong Paik; Zhen Chen; Lochocki, Edward; H., Ariel Seidner; Verma, Amit; Tanen, Nicholas; Jisung Park; Masaki Uchida; ShunLi Shang; Bi-Cheng Zhou; Brützam, Mario; Uecker, Reinhard; Zi-Kui Liu; Jena, Debdeep; Shen, Kyle M.; Muller, David A.; Schlom, Darrell G. // APL Materials;2017, Vol. 5 Issue 11, p1 

    Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm² V-1 s-1 at room temperature and 400 cm² V-1 s-1 at...

  • Gas source iodine n-type doping of molecular beam epitaxially grown CdTe. Rajavel, D.; Summers, C.J. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2231 

    Examines the growth of highly conductive n-type cadmium telluride films through molecular beam epitaxy by iodine doping using ethyliodide. Increase of room-temperature electron concentration for dopant flow rate; Determination of the structural and optical properties by x-ray double crystal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics