Propagation delays and transition times in pulse-modulated semiconductor lasers

Tucker, R. S.; Wiesenfeld, J. M.; Downey, P. M.; Bowers, J. E.
June 1986
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1707
Academic Journal
An experimental and theoretical study of large-signal switching transients in directly modulated semiconductor lasers shows that the main parameters affecting high-speed switching are the small-signal relaxation oscillation frequency and the optical on/off ratio of the pulses. Simple expressions agree well with measured data and can be used to obtain an estimate of the maximum achievable modulation bit rate.


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