Formation of chalcogenide glass p-n junctions

Tohge, Noboru; Kanda, Kimio; Minami, Tsutomu
June 1986
Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1739
Academic Journal
Rectifying p-n junctions have been formed between n-type Ge20Bi11Se69 bulk glass and p-type chalcogenide films such as Ge20Se80 and As2Se3. The forward current in the power law increased with increasing bias voltage, suggesting that it was space charge limited. The spectral response of the short circuit currents showed a maximum and a shoulder at photon energies which corresponded to the optical band gaps of the p-type films and the n-type glass, respectively. This finding is indicative of the bending of the energy bands in both the p-type films and the n-type glass in the vicinity of the p-type film/n-type glass interface.


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