Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanism

Toyoda, H.; Sugai, H.; Kato, K.; Yoshida, A.; Okuda, T.
June 1986
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1648
Academic Journal
The composition of particle flux to deposit hydrogenated amorphous silicon films in a glow discharge is controlled by a combined electrostatic-magnetic deflection technique. As a result, the films are formed firstly without hydrogen ion flux, secondly by neutral flux only, and thirdly by all species fluxes. Comparison of these films reveals the significant role of hydrogen in the surface reactions. Hydrogen breaks the Si–Si bond, decreases the sticking probability of the Si atom, and replaces the SiH bond by a SiH2 bond to increase the hydrogen content of the films.


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