Surface solidification and impurity segregation in amorphous silicon

Peercy, P. S.; Poate, J. M.; Thompson, Michael O.; Tsao, J. Y.
June 1986
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1651
Academic Journal
Real-time measurements of the melt and solidification dynamics during pulsed laser irradiation have permitted elucidation of the processes which lead to the formation of very thin (∼2 nm) buried impurity layers in amorphous silicon. These novel structures are found to result from interfacial segregation at two moving liquid silicon-amorphous silicon interfaces—one propagating toward the surface and the other propagating from the surface inward. The velocities of these interfaces are found to be remarkably low, ranging from 1 to 8 m/s for melts of <20 ns duration.


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