Fast and slow states at the interface of amorphous silicon and silicon nitride

Street, R. A.; Tsai, C. C.
June 1986
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1672
Academic Journal
The effects of a graded composition layer at the amorphous silicon/nitride interface are studied using transient photoconductivity. The graded layer causes a large increase in the density of slow states (electrons trapped within the nitride), but does not influence the fast interface states. The kinetics of trapping and release are measured and a model of field assisted hopping and thermal excitation is proposed. The different origins of slow and fast states are also discussed.


Related Articles

  • In situ investigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry. Stchakovsky, M.; DrĂ©villon, B.; Cabarrocas, P. Roca i // Journal of Applied Physics;8/15/1991, Vol. 70 Issue 4, p2132 

    Presents an in situ study, by spectroellipsometry, of interfaces between amorphous silicon and silicon nitride. Nature of the interface between amorphous silicon and silicon nitride; Results of the study.

  • Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements. Leendertz, C.; Mingirulli, N.; Schulze, T. F.; Kleider, J. P.; Rech, B.; Korte, L. // Applied Physics Letters;5/16/2011, Vol. 98 Issue 20, p202108 

    The photoconductance decay (PCD) measurement is a fast and simple method to characterize amorphous/crystalline (a-Si:H/c-Si) silicon interfaces for high-efficiency solar cells. However, PCD only yields information concerning the overall recombination rate in the structure. To overcome this...

  • Investigation of SiN[sub x]:H/Si interface by capacitance method. Maeda, Keiji; Umezu, Ikurou; Kawaguchi, Akio // Applied Physics Letters;11/4/1991, Vol. 59 Issue 19, p2421 

    Develops a capacitance method to investigate the properties of SiN[sub x]:H/c-Si interface. Frequency dependence of C-V characteristics of p- and n-type c-silicon substrates; Kinds of frequency dependence; Observation on the donor state in the interface.

  • Hydrogen effusion from hydrogenated amorphous silicon caused by the deposition of a silicon... Matsumoto, T.; Watanabe, J.; Tanaka, T.; Mishima, Y. // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p39 

    Studies the effect of silicon nitride (SiN) deposition on hydrogenated amorphous silicon. Determination of the origin of the difference of amorphous silicon/SiN interface properties caused by the order of deposition; Sheet conductance of the on-state in inverted staggered thin film transistors.

  • Structure of interfaces in amorphous silicon/silicon nitride superlattices determined by in situ optical reflectance. Yang, L.; Abeles, B.; Persans, P. D. // Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p631 

    The formation of amorphous hydrogenated silicon/silicon nitride (a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H) interfaces is observed in real time by in situ optical reflectance measurements from growing a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H superlattices....

  • A comparison of the reaction of titanium with amorphous and monocrystalline silicon. Raaijmakers, Ivo J. M. M.; Kim, Ki-Bum // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6255 

    Investigates the reactions occurring between titanium and monocrystalline silicon or sputter-deposited amorphous silicon. Difference between the reactions; Details of the experimental techniques used; Formation and growth of amorphous silicide at the silicon-titanium and amorphous...

  • In situ investigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry. Shirai, H.; Drevillon, B.; Ossikovski, R. // Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2833 

    Evaluates plasma-deposited amorphous silicon and silicon nitride interfaces via infrared ellipsometry. Role of deposition sequence in the experiment; Relationship of deposition sequence and the underlayer material; Discussion on the formation mechanism of the interfaces.

  • Controlled photoluminescence in amorphous-silicon-nitride microcavities. Serpengu¨zel, Ali; Tanriseven, Selim // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1388 

    Narrow-band and enhanced photoluminescence have been observed in hydrogenated amorphous-silicon-nitride microcavities. The distributed Bragg reflectors were fabricated using alternating layers of hydrogenated amorphous-silicon nitride and hydrogenated amorphous-silicon oxide. The microcavity...

  • Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon. Kougia, K. V.; Terukov, E. I.; Fus, V. // Semiconductors;Oct98, Vol. 32 Issue 10, p1131 

    A model of the decay kinetics of photoconductivity in amorphous hydrogenated silicon, in which recombination of excess carriers is assumed to occur via tunnelling, is proposed. It is shown that study of the decay shape after flash illumination can be a very effective way to detect structural...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics