TITLE

Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface

AUTHOR(S)
Windhorn, T. H.; Goodhue, W. D.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1675
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge-emitting double-heterostructure diode lasers with a monolithic 45° deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while the other facet was cleaved. Diode laser/deflector devices with two etched laser facets could be used to fabricate monolithic two-dimensional laser arrays.
ACCESSION #
9820111

 

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