Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells

Fritz, I. J.; Drummond, T. J.; Osbourn, G. C.; Schirber, J. E.; Jones, E. D.
June 1986
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1678
Academic Journal
We report electrical transport data for holes in single strained quantum well structures of the type GaAs/InxGa1-xAs/GaAs with x≊0.2. With modulation doping, 4 K mobilities of ∼3×104 cm2/V s have been achieved. This value is near that attained for electrons in comparable structures, illustrating the enhanced transport possible due to the strain-induced light-hole planar mass.


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