Photoluminescence of undoped, N+-implanted and C+-implanted AlAs grown by molecular beam epitaxy

Makita, Yunosuke; Kudo, Kazuhiro; Momura, Toshio; Takeuchi, Yoshinori; Yokota, Masaki; Mitsuhashi, Yoshinobu; Kobayashi, Toshihiko; Izumi, Tomio; Matsumori, Tokue
June 1986
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1687
Academic Journal
Low-temperature photoluminescence studies of undoped, N+ (nitrogen)-implanted and C+ (carbon)-implanted AlAs grown by molecular beam epitaxy are reported. It was experimentally demonstrated that a dominant emission temporarily denoted by A, observed at 13 meV below the indirect excitonic band gap, Eg,ind(X), is closely related with N isoelectronic impurity atoms. It was also found that the A emission accompanies many one-phonon and two-phonon replicas, among which the longitudinal optical phonon replica is predominant. Carbon atoms were determined not to be principal residual impurities in undoped AlAs. The two conspicuous C-related emissions were revealed by the intentional incorporation of C atoms, which are situated at 60 and 64 meV below Eg,ind(X).


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