TITLE

Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasers

AUTHOR(S)
Walpole, J. N.; Liau, Z. L.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1636
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Two-dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.
ACCESSION #
9820082

 

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