TITLE

Monolithic two-dimensional arrays of high-power GaInAsP/InP surface-emitting diode lasers

AUTHOR(S)
Walpole, J. N.; Liau, Z. L.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1636
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Two-dimensional arrays of 16 laser elements have been fabricated using the mass transport process. Good uniformity, low threshold current (typically 11–14 mA per element), and high total cw power (up to 0.27 W at 22 °C) were obtained.
ACCESSION #
9820082

 

Related Articles

  • A novel GaInAsP/InP distributed feedback laser. Liau, Z. L.; Flanders, D. C.; Walpole, J. N.; DeMeo, N. L. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p221 

    GaInAsP/InP distributed feedback lasers have been fabricated with a simple new design in which the grating is etched into the top of a mass-transported buried heterostructure. Single-frequency operation with sidemodes lower than - 32 dB and threshold currents as low as 16 mA have been achieved.

  • Period doubling in directly modulated InGaAsP semiconductor lasers. Chusseau, Laurent; Hemery, Eric; Lourtioz, Jean-Michel // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p822 

    We report on period doubling in a directly modulated InGaAsP semiconductor laser at 1.3 μm. This behavior is obtained for modulation frequencies between fr and 1.6fr, where fr is the laser resonant frequency measured under weak current modulation. The domain of period doubling as well as the...

  • GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen. Matsui, Teruhito; Sugimoto, Hiroshi; Ohishi, Toshiyuki; Abe, Yuji; Ohtsuka, Ken’ichi; Ogata, Hitoshi // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1193 

    A reactive ion etching method is applied to fabricate mirrors of 1.5 μm GaInAsP/InP mass transport lasers using a mixture of ethane and hydrogen as an etchant. Threshold currents as low as 35 mA are achieved for the 300-μm-long cavity lasers with one etched and one cleaved facet. The...

  • Red light-emitting diodes based on InP/GaP quantum dots. Hatami, F.; Lordi, V.; Harris, J. S.; Kostial, H.; Masselink, W. T. // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p096106 

    The growth, fabrication, and device characterization of InP quantum-dot light-emitting diodes based on GaP are described and discussed. The diode structures are grown on gallium phosphide substrates using gas-source molecular-beam epitaxy and the active region of the diode consists of...

  • Pressure and Temperature Tuned Semiconductor Laser Diodes. Bajda, M.; Piechal, B.; Maciejewski, G.; Trzeciakowski, W.; Majewski, J. A. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p917 

    We present results of theoretical studies of the pressure and temperature tuned laser diodes (LDs) based on InGaP/AlGaInP heterostructures taking into account mounting-induced strains. Our studies reveal that mounting-induced strains play an important role in the quantitative description of...

  • Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature. Kim, H. D.; Jeong, W. G.; Lee, J. H.; Yim, J. S.; Lee, D.; Stevenson, R.; Dapkus, P. D.; Jang, J. W.; Pyun, S. H. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p083110 

    Continuous-wave operation at room temperature from InGaAs/InGaAsP/InP quantum dot (QD) laser diodes (LD) has been achieved. A ridge waveguide QD LD with 7 QD-stacks in the active region lases at 1.503 μm at 20 °C and that with 5 QD-stacks lases at 1.445 μm at room temperature. The shift...

  • cw phase-locked array Ga0.25In0.75As0.5P0.5-InP high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition. Razeghi, M.; Blondeau, R.; Krakowski, M.; de Cremoux, B.; Duchemin, J. P.; Lozes, F.; Martinot, M.; Bensoussan, M. A. // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p230 

    Continuous and pulsed phase-locked operation of a high power GaInAsP-InP semiconductor laser emitting at 1.3 μm has been achieved. The laser consists of a seven-striped array of ridge-island lasers fabricated by a two-step low-pressure metalorganic chemical vapor deposition growth technique....

  • Improved characteristics of 660 nm AlGaInP red laser diodes by precise control of the V/III ratio in metal-organic vapor phase epitaxy. Ohgoh, Tsuyoshi; Mukai, Atsushi; Mukaiyama, Akihiro; Asano, Hideki; Hayakawa, Toshiro // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181117 

    The effects of the group V/III ratio during low-pressure metal-organic vapor phase epitaxy on laser performance have been investigated for GaInP/AlGaInP laser diodes. The quality of GaInP is found to be better at a V/III ratio much lower than an optimal V/III ratio for AlGaInP. GaInP/AlGaInP...

  • Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP. Goetz, K.-H.; Bimberg, D.; Brauchle, K.-A.; Jürgensen, H.; Selders, J.; Razeghi, M.; Kuphal, E. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p277 

    Two deep traps in Ga[sub 0.47]In[sub 0.53]As/InP:Fe at a depth of 110 meV and 150 meV, respectively, are observed for the first time using low-temperature photoluminescence and deep level transient spectroscopy. The dependence of luminescence intensity on the growth process itself (liquid phase...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics