High-brightness green-emitting electroluminescent devices with ZnS:Tb,F active layers

Ogura, T.; Mikami, A.; Tanaka, K.; Taniguchi, K.; Yoshida, M.; Nakajima, S.
June 1986
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1570
Academic Journal
The dependence of brightness on the concentration ratio of fluorine to terbium was studied in thin-film electroluminescent devices with rf-sputtered ZnS:Tb,F active layers. It was found that the device exhibits a maximum brightness at the concentration ratio of about 1. By optimizing not only the concentration ratio but also the terbium concentration, a brightness more than 300 fL is obtained under 1 kHz pulse excitation.


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