TITLE

InGaAsP laser with semi-insulating current confining layers

AUTHOR(S)
Dutta, N. K.; Zilko, J. L.; Cella, T.; Ackerman, D. A.; Shen, T. M.; Napholtz, S. G.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1572
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The fabrication and performance characteristics of a InGaAsP laser structure with semi-insulating current confining layers are reported. The semi-insulating layers are Fe-doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20–30 mA and external differential quantum efficiency ∼0.2 mW/mA/facet at 30 °C. The bandwidth for small-signal response is ∼2 GHz which suggests that the laser structure is suitable for high bit rate lightwave transmission systems. Initial aging results yield an estimated operating lifetime of 10 years at 20 °C.
ACCESSION #
9820076

 

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