Morphological degradation of TiSi2 on <100> silicon

Revesz, P.; Zheng, L. R.; Hung, L. S.; Mayer, J. W.
June 1986
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1591
Academic Journal
Evidence of instability of TiSi2 layers during high-temperature high vacuum annealing has been observed. Rutherford backscattering and scanning electron microscopy measurements showed that at high vacuum annealing conditions, the laterally homogeneous silicide layer breaks up into islands. In between these TiSi2 islands, growth of an epitaxial silicon layer was observed.


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