Material reaction and silicide formation at the refractory metal/silicon interface

Rubloff, G. W.; Tromp, R. M.; van Loenen, E. J.
June 1986
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1600
Academic Journal
Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low-temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Ã… or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.


Related Articles

  • Reverse current transport mechanism in shallow junctions containing silicide spikes. Chi, D. Z.; Wang, W. D.; Chua, S. J.; Ashok, S. // Journal of Applied Physics;12/15/2002, Vol. 92 Issue 12, p7532 

    In this article, a simple physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes is proposed and discussed. It includes analytical calculations of maximum electrical field around a silicide spike tip and tunneling probability of electrons...

  • Growth of TiSi[sub 2] from codeposited TiSi[sub x] layers and interfacial layers. Tung, R.T.; Fujii, K. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2386 

    Examines the silicide formation characteristics from composition profiles created on silicon by codeposition. Effect of thin interfacial amorphous titanium silicon layer to transformation temperature; Accommodation of the growth of C54TiSi[sub 2] by predeposition and preannealing; Efficacy of...

  • Initial stages in the Sm-Si(111) interface formation. Krachino, T. V.; Kuz’min, M. V.; Loginov, M. V.; Mittsev, M. A. // Physics of the Solid State;Feb98, Vol. 40 Issue 2, p341 

    The initial stages in the formation of the Sm-Si(111) interface have been studied by thermal desorption, atomic beam modulation, and low-energy-electron-diffraction spectroscopy. The structure of adsorbed films and samarium silicide films, as well as the Sm atom desorption kinetics have been...

  • Formation of epitaxial yttrium silicide on (111) silicon. Siegal, Michael P.; Kaatz, Forrest H.; Graham, William R.; Santiago, Jorge J.; Van der Spiegel, Jan // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p2999 

    Studies the growth of epitaxial yttrium silicide on silicon (111) in ultrahigh vacuum. Resistivity, epitaxial quality and pinhole coverages for each growth method used; Significance of epitaxial metal silicide-silicon interfaces; Reaction between an Y overlayer and a silicon (111) substrate.

  • Laser-induced Ni(Ti) silicide formation. Setiawan, Y.; Lee, P. S.; Pey, K. L.; Wang, X. C.; Lim, G. C. // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p113108 

    Effects of Ti alloying during laser-induced Ni silicide formation is studied. Unique triple layer microstructures were found with the presence of supercell in the NiSi2 grains formed at the interface. This supercell formation was caused by a local ordering of Ni and Si atoms that favor lower...

  • Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation. Milinovic, V.; Bibic, N.; Dhar, S.; Siljegovic, M.; Schaaf, P.; Lieb, K.P. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 8, p2093 

    In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV14N2+ ion implantation in57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy,...

  • Dependence of radiation-induced interface traps on silicide gate stoichiometry in silicide/SiO2/Si devices. Buchner, S.; Natan, M.; Kang, K.; Gill, D. // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p242 

    The density of radiation-induced traps at the Si/SiO2 interface in TiSix and WSix gate metal-oxide-semiconductor capacitors is shown to depend on the stoichiometry (x value) of the silicide. The dependence is such that capacitors with metal-rich silicide gates exhibit a smaller increase in...

  • Formation and distribution of compounds at the Ru–Si(001) ultrathin film interface. Pasquali, L.; Mahne, N.; Montecchi, M.; Mattarello, V.; Nannarone, S. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    Interface formation between Ru and Si(001) has been studied by x-ray and ultraviolet photoemissions. The film properties were investigated, for metal deposition at room temperature, as a function of the Ru film thickness and as a function of the annealing temperature of a thick grown film. From...

  • Tantalum silicide Schottky contacts to GaAs. Lee, C. P.; Liu, T. H.; Lei, T. F.; Wu, S. C. // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p642 

    Examines the tantalum silicide films with different silicon to tantalum ratios as Schottky contacts to gallium arsenide. Preparation of the films by coevaporation; Metallurgical properties of the film; Stability of the silicide-gallium arsenide interface.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics