TITLE

Material reaction and silicide formation at the refractory metal/silicon interface

AUTHOR(S)
Rubloff, G. W.; Tromp, R. M.; van Loenen, E. J.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1600
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low-temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 Ã… or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.
ACCESSION #
9820058

 

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