TITLE

Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxy

AUTHOR(S)
Jen, H. R.; Cherng, M. J.; Stringfellow, G. B.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1603
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron diffraction measurements on (100) GaAs1-xSbx layers with x≊0.5 grown by organometallic vapor phase epitaxy indicate that ordered phases are formed during growth. Two ordered phases are observed. The simple, tetragonal AuCu-I type phase consists of alternating {100} oriented GaAs and GaSb layers. Only the two variants with the tetragonal c axes perpendicular to the growth direction are observed. At least two variants are observed for the chalcopyrite E11 structure with alternating {210} oriented GaAs and GaSb layers.
ACCESSION #
9820056

 

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