AlGaAs heterojunction visible (700 nm) light-emitting diodes on Si substrates fabricated by metalorganic chemical vapor deposition

Hashimoto, A.; Kawarada, Y.; Kamijoh, T.; Akiyama, M.; Watanabe, N.; Sakuta, M.
June 1986
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1617
Academic Journal
AlGaAs visible surface light-emitting diodes (LED’s) on silicon substrates have been successfully fabricated by use of the metalorganic chemical vapor deposition technique. The emission spectrum of the LED peaked at 700 nm with a half-width of 45 nm at the forward current of 100 mA at room temperature. The external efficiency was 0.3%.


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