TITLE

Nonlinear high-frequency response of GaAs metal-semiconductor field-effect transistors

AUTHOR(S)
Abeles, J. H.; Tu, C. W.; Schwarz, S. A.; Brennan, T. M.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1620
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Calculations show that phase nonlinearity in 1 μm gate length power GaAs metal-semiconductor field-effect transistors (MESFET’s) can be accounted for by the variation of gate-channel capacitance with gate bias voltage. Buried-layer GaAs MESFET’s having constant gate-channel capacitance have been fabricated and their high-frequency linearity measured. The devices display dramatic reductions of phase nonlinearity to 0.15°/W output power at 6 GHz for powers below saturation in 8 mm gate-width devices confirming that nonlinear capacitance causes nonlinearity observed in conventional GaAs MESFET’s. Channel transit time, estimated at 3–6 ps, is not significant as a cause of nonlinearity and varies less than 100 fs with signal level.
ACCESSION #
9820042

 

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