TITLE

Nonlinear excitonic absorption in (Zn,Mn)Se superlattices and ZnSe films

AUTHOR(S)
Andersen, D. R.; Kolodziejski, L. A.; Gunshor, R. L.; Datta, S.; Kaplan, A. E.; Nurmikko, A. V.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/9/1986, Vol. 48 Issue 23, p1559
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical transmission studies have been performed on ZnSe thin films and two (Zn,Mn)Se superlattices (Eg[bar_over_tilde:_approx._equal_to]2.8 eV) of varying barrier compositions and well widths grown by molecular beam epitaxy. The excitons in these samples ranged in character from three dimensional to quasi two dimensional. The spectra, obtained at 77 K as a function of incident light intensity, clearly show the saturation of the excitonic resonance. This is the first demonstration of nonlinear excitonic absorption in the (Zn,Mn)Se system. Mechanisms for the saturation are discussed with estimates for the relative contributions from Coulombic screening and phase space filling.
ACCESSION #
9820021

 

Related Articles

  • Heavily doped p-ZnSe:N grown by molecular beam epitaxy. Qiu, J.; DePuydt, J.M.; Cheng, H.; Haase, M.A. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p2992 

    Investigates the growth of nitrogen doped p-type zinc selenide (ZnSe) films by molecular beam epitaxy. Obtainment of p-type ZnSe with net acceptor concentrations up to 1.0X10 cm[sup 3]; Evidence of compensation in the low temperature photoluminescence.

  • Hydrogen passivation in nitrogen and chlorine-doped ZnSe films grown by gas source molecular.... Ho, E.; Fisher, P.A. // Applied Physics Letters;2/27/1995, Vol. 66 Issue 9, p1062 

    Investigates the incorporation of hydrogen in nitrogen and chlorine-doped zinc selenide films grown by gas source molecular beam epitaxy. Use of elemental zinc and hydrogen selenide as source materials; Enhancement of the hydrogenation behavior; Effects of injecting excessive amount of hydrogen...

  • Atomic force microscopy studies of ZnSe self-organized dots fabricated on ZnS/GaP. Ma, Z. H.; Sun, W. D.; Sou, I. K.; Wong, G. K. L. // Applied Physics Letters;9/7/1998, Vol. 73 Issue 10 

    ZnSe self-organized dot structures on ZnS thin films were fabricated by the molecular beam epitaxy technique. In situ reflection high-energy electron diffraction studies reveal that growth interruption is required for the formation of the dot structure. Atomic force microscopy (AFM) images of...

  • Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio. DePuydt, J. M.; Cheng, H.; Potts, J. E.; Smith, T. L.; Mohapatra, S. K. // Journal of Applied Physics;12/15/1987, Vol. 62 Issue 12, p4756 

    Presents information on a study which investigated the effects of growth conditions on film properties by growing thin zinc selenide (ZnSe) films on gallium arsenide substrates by molecular beam epitaxy (MBE). Details of the MBE growth; Monitoring of reflection high-energy electron diffraction...

  • Determination of the optical constants of ZnSe films by spectroscopic ellipsometry. Dahmani, R.; Salamanca-Riba, L.; Nguyen, N. V.; Chandler-Horowitz, D.; Jonker, B. T. // Journal of Applied Physics;7/1/1994, Vol. 76 Issue 1, p514 

    Presents a study which investigated the fundamental edge region of thin single-crystal films of zinc selenide grown by molecular beam epitaxy. Experiment details; Results and discussion; Conclusions.

  • Cathodoluminescence study of domains, defects, and interdiffusion in ZnSe/GaAs(100). Lin, H. T.; Rich, D. H.; Wittry, D. B. // Journal of Applied Physics;6/15/1994, Vol. 75 Issue 12, p8080 

    Examines the distribution of dislocations and domains found in thin zinc selenide films grown by molecular beam epitaxy on gallium arsenide. Use of low-temperature cathodoluminescence imaging and spectroscopy; Use of semiconductor materials in the blue wavelength range for optoeletronic device...

  • Picosecond transient photoluminescence spectra of ZnSe-ZnS strained-layer superlattices grown on.... Jie Cui; Hai-Long Wang // Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1540 

    Examines the picosecond transient photoluminescence spectra of zinc selenide-zinc sulphide strained-layer superlattices on gallium arsenide(001) by molecular beam epitaxy. Relationship between exciton lifetime and well width; Impact of recombination enhancement on carrier lifetimes; Implication...

  • Quantum confinement and strain effects in ZnSe-ZnSxSe1-x strained-layer superlattices. Mohammed, K.; Olego, D. J.; Newbury, P.; Cammack, D. A.; Dalby, R.; Cornelissen, H. // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1820 

    A photoluminescence study of ZnSe-ZnSxSe1-x strained-layer superlattices with x=0.19 grown by molecular beam epitaxy is presented. We observe clear shifts of the excitons to higher energies as the well widths are reduced. These shifts are interpreted in terms of quantum confinement effects using...

  • ZnSe/CdSe Superlattice Nanowires by Catalyst-assisted Molecular Beam Epitaxy. Karczewski, G.; Mahapatra, S.; Borzenko, T.; Dłużewski, P.; Kret, S.; Kłopotowski, L.; Schumacher, C.; Brunner, K.; Molenkamp, L. W.; Wojtowicz, T. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p65 

    We report on Au catalyst-assisted molecular beam epitaxy growth and properties of pure ZnSe and ZnSe/CdSe superlattice nanowires. In particular, we concentrate our attention on the morphological characterization by transmission and scanning electron microscopy of pure ZnSe NWs and we compare...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics