TITLE

Formation of (100)GaAs on (100) silicon by laser recrystallization

AUTHOR(S)
Christou, A.; Efthimiopoulos, T.; Kiriakidis, G.; Varmazis, C.
PUB. DATE
June 1986
SOURCE
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1516
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial growth of (100) GaAs on (100) silicon was achieved by excimer laser annealing of amorphous GaAs layers at 248 nm. An AlAs encapsulation layer was found to be necessary to prevent the loss of arsenic during laser annealing. An energy density of 105 mJ/cm2 was the critical energy density for recrystallization. Field-effect transistors were fabricated on the regrown (100) GaAs and resulted in a transconductance of 70–80 ms/mm.
ACCESSION #
9820015

 

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