Effect of dose rate on ion beam mixing in Nb-Si

Banwell, Thomas; Nicolet, M-A.; Averback, R. S.; Thompson, L. J.
June 1986
Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1519
Academic Journal
The influence of dose rate, i.e., ion flux, on ion beam mixing in Nb-Si bilayer samples was measured at room temperature and 325 °C. At the higher temperature, an increase in dose rate of a factor of 20 caused a decrease in the thickness of the mixed layer by a factor of 1.6 for equal total doses. At room temperature, the same change in flux had no effect on mixing. These results are consistent with radiation-enhanced diffusion theory in the recombination-limited regime.


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